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      產品中心

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      PT8822

      VDS= 20V
      RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
      RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
      RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
      Features
      Advanced trench process technology
      High Density Cell Design For Ultra Low On-Resistance
      Ideal for Li ion battery

      PT2010E

      N-Channel Enhancement Mode Power MOSFET
      Description
      The PT2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
      General Features
      ● VDS = 20V,ID =7A
      RDS(ON) < 27mΩ @ VGS=2.5V
      RDS(ON) < 21mΩ @ VGS=4.5V
      ESD Rating: 2000V HBM
      ● High power and current handing capability
      ● Lead free product is acquired
      ● Surface mount package
      Application
      ●PWM application
      ●Load switch

      PTY8726

      Features
      ? Low On-Resistance
      ? Fast Switching
      ? 100% Avalanche Tested
      ? Repetitive Avalanche Allowed up to Tjmax
      ? Lead-Free, RoHS Compliant
      Description
      PTY8726 designed by the trench process
      techniques to achieve extremely low on-resistance.
      Additional features of this design can operate at
      high junction temperature, fast switching speed and
      improved repetitive avalanche rating . These
      features combine to make this design an extremely
      efficient and reliable device for use in Motor
      applications and a wide variety of other applications.
      Absolute Maximum Ratings
      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
      functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
      absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
      measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.

      PTU06N02

      Features
      ? Very Low RDS(on) @ 2.5V Logic.
      ? V Logic Level Control
      ? TO-251 Package
      ? Pb?Free, RoHS Compliant
      Applications
      ? Low Side Load Switch
      ? Battery Switch
      ? Optimized for Power Management Applications for
      Portable Products, such as Aeromodelling, Power bank,
      Brushless motor, Main board , and Others

      PTI03N02

      Features
      ? Very Low RDS(on) @ 2.5V Logic.
      ? 3.3V Logic Level Control
      ? TO-262 Package
      ? Pb?Free, RoHS Compliant
      Applications
      ? Low Side Load Switch
      ? Battery Switch
      ? Optimized for Power Management Applications for
      Portable Products, such as Aeromodelling, Power bank,
      Brushless motor, Main board , and Others
      BVDSS 20 V
      ID 120 A
      RDSON@VGS=4.5V 2.6 mΩ
      RDSON@VGS=2.5V 3.8 mΩ

      SI2307

      -30V P-Channel Enhancemen t M o d e M O S F E T
      VDS= -30V
      RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ
      RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
      Features
      Advanced trench process technology
      High Density Cell Design For Ultra Low On-Resistance
      Package Dimensions

      XP152A12COMR

      -20V P-Channel Enhancemen t ModeMOSFET
      VDS= -20V
      RDS(ON), Vgs@-4.5V, Ids@-2.8A<130mΩ
      RDS(ON), Vgs@-2.5V, Ids@-2.0A<190mΩ
      Features
      Advanced trench process technology
      High Density Cell Design For Ultra Low On-Resistance
      Package Dimensions

      XP151A13COMR

      20V N-Channel Enhancement Mode MOSFET
      VDS= 20V
      RDS(ON), Vgs@ 4.5V, Ids@3.6A<85mΩ
      RDS(ON), Vgs@ 2.5V, Ids@ 2.0A<115mΩ
      Features
      Advanced trench process technology
      High Density Cell Design For Ultra Low On-Resistance
      Package Dimensions

      XP151A13AOMR

      FDN335N

      20V N-Channel Enhancemen t ModeMOSFET
      VDS= 20V
      RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
      RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
      Features
      Advanced trench process technology
      High Density Cell Design For Ultra Low On-Resistance
      Package Dimensions

      FDN306P

      -12V P-Channel Enhancemen t ModeMOSFET
      Features
      ? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
      RDS(ON) = 50 mΩ @ VGS = –2.5 V
      RDS(ON) = 80 mΩ @ VGS = –1.8 V
      ? Fast switching speed
      Applications
      ? Battery management
      ? Load switch
      ? Battery protection

      BSS84

      -50V P-Channel Enhancement Mode MOSFET
      VDS= -50V
      RDS(ON), Vgs@-10V, Ids@-0.1A<8Ω
      RDS(ON), Vgs@-5, Ids@-0.1A <10Ω
      Features
      Advanced trench process technology
      High Density Cell Design For Ultra Low On-Resistance
      Package Dimensions

      2SC3356(4G)

      TRANSISTOR (NPN)
      FEATURES
      Power dissipation
      PCM: 0.2 W (Tamb=25℃)
      Collector current
      ICM: 0.1 A
      Collector-base voltage
      V(BR)CBO: 20 V
      Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃

      2SC3356

      TRANSISTOR(NPN)
      FEATURES
      Power dissipation
      PCM: 0.2 W (Tamb=25℃)
      Collector current
      ICM: 0.1 A
      Collector-base voltage
      V(BR)CBO: 20 V
      Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃

      PTS9926B

      Features
      ? BVDSS>20V, RDS(ON)=11mΩ(Typ)@VGS=10V
      ? Low On-Resistance
      ? Fast Switching
          encapsulation:SOP-8
      ? Lead-Free,Hg-Free, Green Product
      PTS9926B designed by the trench processing techniques to
      achieve extremely low on-resistance. And fast switching
      speed and improved transfer effective . These features
      combine to make this design an extremely efficient and
      reliable device for variety of DC-DC applications.

      PTS2017

      20V/17A N-Channel Advanced Power MOSFET
      Features
      ? Very Low RDS(on) @ 3.3V Logic.
      ? 3.3V Logic Level Control
      ? SOP8 Package
      ? Pb?Free, RoHS Compliant
      Applications
      ? Low Side Load Switch
      ? Battery Switch
      ? Optimized for Power Management Applications for
      Portable Products, such as Aeromodelling, Power bank,
      Brushless motor, Main board , and Others

      PT4953B

      -20V P-Channel Enhancemen t ModeMOSFET
      VDS= -2 0V
      RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
      RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
      Features
      High power and current handing capability
      Lead free product is acq uired

      PTMPD0203

      FEATURE
      ·lndependent Pinout to Each Device to
      Each Device to Ease Circuit Design
      ·High Current Schottky Diode
      ·Featuring a MOSFET and a
      ·Schottky Barrier Diode

      APPLICATION
      ·Optinized for Portable Applications Like Cell Phones
      Digital Cameras,Media Players,etc
      ·DC-DC Buck Circuits
      ·Li-ion Battery Applications
      ·Color Display and Camera Flash Regulators

      PTP3034

      封裝形式:TO-220
      類型:單N
      ESD Diode:
      VDS (V):40
      VGS (V):±20
      VTH (V)Typ:2
      ID* (A) 25°C:240
      PD* (W) 25°C:270
      RDS(ON) (mΩ max) at VGS= 10V:3
      RDS(ON) (mΩ max) at VGS= 4.5V:-
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用     MOTO TOOL

      PTP1404

      封裝形式:TO-220
      類型:單N
      ESD Diode:
      VDS (V):40
      VGS (V):±20
      VTH (V)Typ:2.6
      ID* (A) 25°C:180
      PD* (W) 25°C:210
      RDS(ON) (mΩ max) at VGS= 10V:3.6
      RDS(ON) (mΩ max) at VGS= 4.5V:-
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用? ? ?MOTO TOOL

      PTN6234

      封裝形式:PDFN5X6
      類型:單N
      ESD Diode:
      VDS (V):40
      VGS (V):±20
      VTH (V)Typ:1.8
      ID* (A) 25°C:100
      PD* (W) 25°C:130
      RDS(ON) (mΩ max) at VGS= 10V:4
      RDS(ON) (mΩ max) at VGS= 4.5V:6.5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 QC /MOTO TOOL

      PTP440

      封裝形式:TO-220
      類型:單N
      ESD Diode:
      VDS (V):40
      VGS (V):±20
      VTH (V)Typ:1.8
      ID* (A) 25°C:82
      PD* (W) 25°C:80
      RDS(ON) (mΩ max) at VGS= 10V:7.5
      RDS(ON) (mΩ max) at VGS= 4.5V:9.5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用     MOTO TOOL

      PTN6442

      封裝形式:PDFN5X6
      類型:單N
      ESD Diode:
      VDS (V):40
      VGS (V):±20
      VTH (V)Typ:1.8
      ID* (A) 25°C:60
      PD* (W) 25°C:32
      RDS(ON) (mΩ max) at VGS= 10V:7.5
      RDS(ON) (mΩ max) at VGS= 4.5V:9.5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Load Switch

      PTS9468

      封裝形式:SOP8
      類型:單N
      ESD Diode:
      VDS (V):40
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:150
      PD* (W) 25°C:150
      RDS(ON) (mΩ max) at VGS= 10V:1.9
      RDS(ON) (mΩ max) at VGS= 4.5V:2.6
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Load Switch

      PTD6548

      封裝形式:TO-252
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:150
      PD* (W) 25°C:150
      RDS(ON) (mΩ max) at VGS= 10V:1.9
      RDS(ON) (mΩ max) at VGS= 4.5V:2.6
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用           MOTO TOOL

      PTN6548

      封裝形式:PDFN5X6
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:150
      PD* (W) 25°C:150
      RDS(ON) (mΩ max) at VGS= 10V:1.8
      RDS(ON) (mΩ max) at VGS= 4.5V:2.5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用           MOTO TOOL

      PTD508

      封裝形式:TO-252
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:130
      PD* (W) 25°C:150
      RDS(ON) (mΩ max) at VGS= 10V:3.5
      RDS(ON) (mΩ max) at VGS= 4.5V:5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用           MOTO TOOL

      PTN6512

      封裝形式:PDFN5X6
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:130
      PD* (W) 25°C:150
      RDS(ON) (mΩ max) at VGS= 10V:3.5
      RDS(ON) (mΩ max) at VGS= 4.5V:5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用           MOTO TOOL

      PTS4240

      封裝形式:SOP8
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.3
      ID* (A) 25°C:24
      PD* (W) 25°C:3
      RDS(ON) (mΩ max) at VGS= 10V:4
      RDS(ON) (mΩ max) at VGS= 4.5V:5.5
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用           Load Switch

      PTD3098

      封裝形式:TO-252
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:90
      PD* (W) 25°C:115
      RDS(ON) (mΩ max) at VGS= 10V:5.5
      RDS(ON) (mΩ max) at VGS= 4.5V:7
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Power Bank

      PTN3098

      封裝形式:PDFN5X6
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:90
      PD* (W) 25°C:90
      RDS(ON) (mΩ max) at VGS= 10V:5.5
      RDS(ON) (mΩ max) at VGS= 4.5V:7
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Power Bank

      PTN7530

      封裝形式:PDFN3333
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:30
      PD* (W) 25°C:20
      RDS(ON) (mΩ max) at VGS= 10V:6
      RDS(ON) (mΩ max) at VGS= 4.5V:8
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用?Load Switch

      PTD3006

      封裝形式:TO-525
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:80
      PD* (W) 25°C:80
      RDS(ON) (mΩ max) at VGS= 10V:7
      RDS(ON) (mΩ max) at VGS= 4.5V:9
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用? ? ? ?Main Board

      PTN3006

      封裝形式:PDFN5X6
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:80
      PD* (W) 25°C:65
      RDS(ON) (mΩ max) at VGS= 10V:7
      RDS(ON) (mΩ max) at VGS= 4.5V:9
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用?Main Board

      PTO3006

      封裝形式:PDFN3333
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:80
      PD* (W) 25°C:42
      RDS(ON) (mΩ max) at VGS= 10V:7
      RDS(ON) (mΩ max) at VGS= 4.5V:9
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Main Board

      PT4430

      封裝形式:SOP88POS
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:18
      PD* (W) 25°C:2.5
      RDS(ON) (mΩ max) at VGS= 10V:7.5
      RDS(ON) (mΩ max) at VGS= 4.5V:10
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用?Load Switch

      PT4410

      封裝形式:SOP8
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.1
      ID* (A) 25°C:10
      PD* (W) 25°C:2
      RDS(ON) (mΩ max) at VGS= 10V:13.5
      RDS(ON) (mΩ max) at VGS= 4.5V:20
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用?Load Switch

      PTS4566

      封裝形式:SOP8
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:12
      PD* (W) 25°C:2.5
      RDS(ON) (mΩ max) at VGS= 10V:12
      RDS(ON) (mΩ max) at VGS= 4.5V:15
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Load Switch

      PTT7506

      封裝形式:PDFN333
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:18
      PD* (W) 25°C:20
      RDS(ON) (mΩ max) at VGS= 10V:12
      RDS(ON) (mΩ max) at VGS= 4.5V:15
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用 Load Switch

      PTD3004

      封裝形式:TO-252
      類型:單N
      ESD Diode:
      VDS (V):30
      VGS (V):±20
      VTH (V)Typ:1.6
      ID* (A) 25°C:50
      PD* (W) 25°C:50
      RDS(ON) (mΩ max) at VGS= 10V:13
      RDS(ON) (mΩ max) at VGS= 4.5V:16
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用?Main Board
      ?

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