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      產品中心

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      PTW20N50

      Features
      ■ RDS(on) (Max 0.26 Ω )@VGS=10V
      ■ Gate Charge (Typical 90nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■ Maximum Junction Temperature Range (150°C)

      PTW9N90

      Features
      ■ RDS(on) (Max 1.4 Ω )@VGS=10V
      ■ Gate Charge (Typical 47nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■ Maximum Junction Temperature Range (150°C)

      PTU50N03

      60A , 25 V N-Channel MOSFET
      Features
      ●RDS(ON) = 5.2mΩ @VGS = 10 V
      ●Low capacitance
      ●Optimized gate charge
      ●Fast switching capability
      ●Avalanche energy specified

      PTU7N65

      650V N-Channe MOSFET

      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 16 nC (Typ.)
      ●BVDSS=650V,ID=6.5A
      ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTU6N65

      650V N-Channe MOSFET

      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 16 nC (Typ.)
      ●BVDSS=650V,ID=6A
      ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTU6N60

      600V N-Channe MOSFET

      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 16 nC (Typ.)
      ●BVDSS=600V,ID=6A
      ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTU5N65

      650V N-Channel MOSFET

      Features
      ●Low Intrin sic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 15 nC (Typ.)
      ●BVDSS=650V,ID=4.5A
      ●Lower RDS(on) : 2.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTU2N80

      HIGH VOLTAGE N-Channel MOSFET
      600V N-Channel MOSFET

      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge :12 nC (Typ.)
      ●BVDSS=800V,ID=2A
      ●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTP9540

      P-Channel Enhancement Mode Power MOSFET
      Description
      The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

      General Features
      ● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
      ● Super high dense cell design
      ● Advanced trench process technology
      ● Reliable and rugged
      ● High density cell design for ultra low On-Resistance

      Application
      ● Portable equipment and battery powered systems

      PTP8580

      Description
      The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

      General Features
      ● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Special designed for convertors and power controls
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation
      ● Special process technology for high ESD capability

      Application
      ●Power switching application
      ●Hard switched and High frequency circuits
      ●Uninterruptible power supply

      PTP7190

      Description
      The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

      General Features
      ● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
      ● Special process technology for high ESD capability
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation

      Application
      ●Power switching application
      ●Hard switched and High frequency circuits
      ●Uninterruptible power supply

      PTP1579

      Description
      The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

      General Features
      ● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation
      ● Special process technology for high ESD capability

      Application
      ●Power switching application
      ●Hard switched and high frequency circuits
      ●Uninterruptible power supply

      PTP1550

      Description
      The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

      General Features
      ● VDS =150V,ID =50A
      RDS(ON) <23mΩ @ VGS=10V
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation
      ● Special process technology for high ESD capability

      Application
      ●Power switching application
      ●Hard switched and High frequency circuits
      ●Uninterruptible power supply

      PTF50M06

      Features
      ? 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
      ? Low gate charge ( typical 33nC)
      ? Fast switching
      ? 100% avalanche tested
      ? Improved dv/dt capability

      General Description
      This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
      especially designed to minimize on-state resistance, have a high
      rugged avalanche characteristics. These devices are well suited
      for high efficiency switch mode power supplies, active power
      factor correction, electronic lamp ballasts based on half bridge
      topology.

      PTP8N60

      Features
      ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
      ■ Gate charge (Typical 30nC)
      ■ High ruggedness
      ■ Fast switching
      ■ 100% AvalancheTested
      ■ Improved dv/dt capability

      General Description
      This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

      PTP5N65-E

      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 15 nC (Typ.)
      ●BVDSS=650V,ID=4.5A
      ●Lower RDS(on) : 2.7Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTP2N80

      800V N-Channel MOSFET
      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge :Qg= 13nC (Typ.)
      ●BVDSS=800V,ID=3A
      ●RDS(on) : 5 Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTP01H11

      Description
      The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

      General Features
      ● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation
      ● Special process technology for high ESD capability

      Application
      ● Power switching application
      ● Hard switched and high frequency circuits
      ● Uninterruptible power supply

      PTP01H10

      Description
      The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
      General Features

      ● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
      ● Special process technology for high ESD capability
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation

      Application
      ● Power switching application
      ● Hard switched and high frequency circuits
      ● Uninterruptible power supply

      PTF12N60

      Features
      ■ RDS(on) (Max 0.70 Ω )@VGS=10V
      ■ Gate Charge (Typical 50nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■ Maximum Junction Temperature Range (150°C)

      PTF10N65

      Features
      ■ RDS(on) (Typical 0.70 Ω )@VGS=10V
      ■ Gate Charge (Typical 45nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■ Maximum Junction Temperature Range (150°C)

      General Description
      This Power MOSFET is produced using Wisdom’s advanced
      planar stripe, DMOS technology. This latest technology has been
      especially designed to minimize on-state resistance, have a high
      rugged avalanche characteristics. These devices are well suited
      for high efficiency switch mode power supplies, active power factor
      correction, electronic lamp ballasts based on half bridge topology.

      PTF10N60

      Features
      10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
      Low gate charge ( typical 48nC)
      High ruggedness
      Fast switching
      100% avalanche tested
      Improved dv/dt capability

      PTF8N60

      Features
      ■ RDS(on) (Max 1.2 Ω )@VGS=10V
      ■ Gate Charge(Typical 28nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■ Maximum Junction Temperature Range(150°C)

      PTF5N60

      Features
      ■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
      ■ Gate charge (Typical 17nC)
      ■ High ruggedness
      ■Fast switching
      ■100% AvalancheTested
      ■Improved dv/dt capability

      General Description

      This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

      PTF3N80

      Features
      ■ RDS(on) (Max 5.0 Ω )@VGS=10V
      ■ Gate Charge(Typical 15.0nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■ Maximum Junction Temperature Range(150°C)

      PTD7580

      Description
      The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
      General Features
      ● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
      ● Special process technology for high ESD capability
      ● Special designed for convertors and power controls
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation

      Application
      ● Power switching application
      ● Hard switched and high frequency circuits
      ● Uninterruptible power supply

      PTD630

      200V N-Channel MOSFET
      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 22 nC (Typ.)
      ●BVDSS=200V,ID=9A
      ●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTD50N03

      60A , 25 V N-Channel MOSFET
      Features
      ●RDS(ON) = 5.2mΩ @VGS = 10 V
      ●Low capacitance
      ●Optimized gate charge
      ●Fast switching capability
      ●Avalanche energy specified

      PTD30P55

      DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
      General Features
      ● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
      ● High density cell design for ultra low Rdson
      ● Fully characterized avalanche voltage and current
      ● Good stability and uniformity with high EAS
      ● Excellent package for good heat dissipation

      Application
      ●Power switching application
      ●Hard switched and high frequency circuits
      ●Uninterruptible power supply

      PTD7N65

      650V N-Channel MOSFET
      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 16 nC (Typ.)
      ●BVDSS=650V,ID=6.5A
      ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTD6N65

      650V N-Channel MOSFET
      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 16 nC (Typ.)
      ●BVDSS=650V,ID=6A
      ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTD6N60

      600V N-Channel MOSFET
      Features
      ● Low Intrinsic Capacitances
      ● Excellent Switching Characteristics
      ● Extended Safe Operating Area
      ● Unrivalled Gate Charge : 16 nC (Typ.)
      ● BVDSS=600V,ID=6A
      ● Lower RDS(on) : 1.5Ω (Max) @VG=10V
      ● 100% Avalanche Tested

      PTD5N65

      650V N-Channel MOSFET
      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge : 15 nC (Typ.)
      ●BVDSS=650V,ID=4.5A
      ●Lower RDS(on) : 2.5Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTD5N50

      N-Channel MOSFET
      Features
      ■ RDS(on) (Max 1.5Ω) @ VGS=10V
      ■ GateCharge(Typical 20nC)
      ■ Improved dv/dt Capability, High Ruggedness
      ■ 100% Avalanche Tested
      ■MaximumJunctionTemperatureRange(150°C)

      PTD2N80

      HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

      Features
      ●Low Intrinsic Capacitances
      ●Excellent Switching Characteristics
      ●Extended Safe Operating Area
      ●Unrivalled Gate Charge :12 nC (Typ.)
      ●BVDSS=800V,ID=2A
      ●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
      ●100% Avalanche Tested

      PTR1N60

      N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
      ●TYPICAL RDS(on) = 8 W
      ●EXTREMELY HIGH dv/dt CAPABILITY
      ● 100% AVALANCHE TESTED
      ●GATE CHARGE MINIMIZED
      ●NEW HIGH VOLTAGE BENCHMARK

      APPLICATIONS
      ●SWITCH MODE LOW POWER SUPPLIES(SMPS)
      ●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
      ● LOW POWER BATTERY CHARGERS

      PTF9N90

      封裝形式:TO-220F
      類型:單N
      ESD Diode:
      VDS (V):900
      VGS (V):±30
      VTH (V)Typ:4
      ID* (A) 25°C:9
      PD* (W) 25°C:45
      RDS(ON) (mΩ max) at VGS= 10V:1.9
      RDS(ON) (mΩ max) at VGS= 4.5V:-
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用SMPS

      PTP9N90

      封裝形式:TO-220
      類型:單N
      ESD Diode:
      VDS (V):900
      VGS (V):±30
      VTH (V)Typ:4
      ID* (A) 25°C:9
      PD* (W) 25°C:240
      RDS(ON) (mΩ max) at VGS= 10V:1.9
      RDS(ON) (mΩ max) at VGS= 4.5V:-
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用SMPS

      PTF7N80

      封裝形式:TO-220F
      類型:單N
      ESD Diode:
      VDS (V):800
      VGS (V):±30
      VTH (V)Typ:4
      ID* (A) 25°C:7
      PD* (W) 25°C:45
      RDS(ON) (mΩ max) at VGS= 10V:1.4
      RDS(ON) (mΩ max) at VGS= 4.5V:-
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用SMPS

      PTP7N80

      封裝形式:TO-220
      類型:單N
      ESD Diode:
      VDS (V):800
      VGS (V):±30
      VTH (V)Typ:4
      ID* (A) 25°C:7
      PD* (W) 25°C:240
      RDS(ON) (mΩ max) at VGS= 10V:1.4
      RDS(ON) (mΩ max) at VGS= 4.5V:-
      RDS(ON) (mΩ max) at VGS= 2.5V:-
      RDS(ON) (mΩ max) at VGS= 1.8V:-
      典型應用SMPS
      ?

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